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Plasma-enhanced chemical vapor deposition
 | This article needs additional citations for verification. (April 2011) |
Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) alternating current (AC) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.
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Deposició química de vapor millorada per plasma Catalan Plasmaunterstützte chemische Gasphasenabscheidung German انباشت بخار شیمیایی تقویتشده با پلاسما FA Dépôt chimique en phase vapeur assisté par plasma French Deposizione chimica da vapore potenziata dal plasma Italian プラズマCVD Japanese Plasma-enhanced chemical vapor deposition Dutch Плазменно-химическое осаждение из газовой фазы Russian Plazmové nanášanie rozkladom pár SK
