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Atomic layer deposition

Schematic illustration of one reaction cycle of the ALD process, using the trimethylaluminium (TMA) -water process to make thin aluminium oxide films as (simplified) example. There, the starting surface contains hydroxyls (OH groups) as reactive sites; Step 1 is the reaction of TMA; Step 2 is a purge or evacuation step, Step 3 is the reaction of water, and Step 4 is a purge or evacuation step.[1]

Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesizing nanomaterials.

  1. ^ Cremers, Véronique; Puurunen, Riikka L.; Dendooven, Jolien (4 April 2019). "Conformality in atomic layer deposition: Current status overview of analysis and modelling". Applied Physics Reviews. 6 (2). AIP Publishing (published June 2019). doi:10.1063/1.5060967. eISSN 1931-9401. hdl:1854/LU-8614054.

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ترسيب الطبقة الذرية Arabic Deposició en capa atòmica Catalan Atomlagenabscheidung German Deposición de capas atómicas Spanish Aatomkihtsadestamine ET Atomikerroskasvatus Finnish Atomic layer deposition French Atomi rétegleválasztás Hungarian 原子層堆積 Japanese 원자층 증착 Korean

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