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Static induction thyristor
The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state.[1] It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds.[2][3][4]
- ^ Li, Siyuan; Liu Su; Yang, Jianhong; Sang, Baosheng; Liu, Ruixi (1994). Study of 40 A / 1000 V static induction thyristor (SITH). Vol. 1. Beijing, China: International Academic Publishers. pp. 205–208. ISBN 978-7-80003-315-5.
- ^ J. Nishizawa; K. Nakamura (1978). "Static induction thyristor". Revue de Physique Appliquée. 13 (12): 725–728. doi:10.1051/rphysap:019780013012072500.
- ^ ChunJuan Liu; Su Liu; YaJie Bai (2014). "Switching performances of static induction thyristor with buried-gate structure". Science China Information Sciences. 57 (6): 1–6. doi:10.1007/s11432-013-4955-x.
- ^ Bongseong Kim; Kwang-Cheol Ko; Eiki Hotta (2011). "Study of Switching Characteristics of Static Induction Thyristor for Pulsed Power Applications". IEEE Transactions on Plasma Science. 39 (5): 901–905. Bibcode:2011ITPS...39..901K. doi:10.1109/TPS.2010.2099242. eISSN 1939-9375. ISSN 0093-3813. OCLC 630064521. S2CID 32745943.
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