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Tungsten diselenide

Tungsten diselenide
WSe2 monolayer on graphene (yellow) and its atomic image (inset)[1]
Identifiers
3D model (JSmol)
ECHA InfoCard 100.031.877 Edit this at Wikidata
EC Number
  • 235-078-7
  • InChI=1S/2Se.W
    Key: ROUIDRHELGULJS-UHFFFAOYSA-N
  • [Se]=[W]=[Se]
Properties
WSe2
Molar mass 341.76 g/mol
Appearance grey to black solid
Odor odorless
Density 9.32 g/cm3[2]
Melting point > 1200 °C
insoluble
Band gap ~1 eV (indirect, bulk)[3]
~1.7 eV (direct, monolayer)[4]
Structure
hP6, space group P6
3
/mmc, No 194[2]
a = 0.3297 nm, c = 1.2982 nm
Trigonal prismatic (WIV)
Pyramidal (Se2−)
Thermochemistry
-185.3 kJ mol−1[5]
Hazards
Occupational safety and health (OHS/OSH):
Main hazards
External MSDS
Related compounds
Other anions
Tantalum diselenide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Tungsten diselenide is an inorganic compound with the formula WSe2.[6] The compound adopts a hexagonal crystalline structure similar to molybdenum disulfide. The tungsten atoms are covalently bonded to six selenium ligands in a trigonal prismatic coordination sphere while each selenium is bonded to three tungsten atoms in a pyramidal geometry. The tungsten–selenium bond has a length of 0.2526 nm, and the distance between selenium atoms is 0.334 nm.[7] It is a well studied example of a layered material. The layers stack together via van der Waals interactions. WSe2 is a very stable semiconductor in the group-VI transition metal dichalcogenides.

  1. ^ Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong (2015). "Determination of band alignment in the single-layer MoS2/WSe2 heterojunction". Nature Communications. 6: 7666. arXiv:1406.5137. Bibcode:2015NatCo...6.7666C. doi:10.1038/ncomms8666. PMC 4518320. PMID 26179885.
  2. ^ a b Agarwal, M. K.; Wani, P. A. (1979). "Growth conditions and crystal structure parameters of layer compounds in the series Mo1−xWxSe2". Materials Research Bulletin. 14 (6): 825–830. doi:10.1016/0025-5408(79)90144-2.
  3. ^ Prakash, Abhijith; Appenzeller, Joerg (2017-02-28). "Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors". ACS Nano. 11 (2): 1626–1632. doi:10.1021/acsnano.6b07360. ISSN 1936-0851. PMID 28191930.
  4. ^ Yun, Won Seok; Han, S. W.; Hong, Soon Cheol; Kim, In Gee; Lee, J. D. (2012). "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)". Physical Review B. 85 (3): 033305. Bibcode:2012PhRvB..85c3305Y. doi:10.1103/PhysRevB.85.033305.
  5. ^ O'Hare, P.A.G.; Lewis, Brett M.; parkinson, B.A. (June 1988). "Standard molar enthalpy of formation by fluorine-combustion calorimetry of tungsten diselenide (WSe2). Thermodynamics of the high-temperature vaporization of WSe2. Revised value of the standard molar enthalpy of formation of molybdenite (MoS2)". The Journal of Chemical Thermodynamics. 20 (6): 681–691. doi:10.1016/0021-9614(88)90019-5.
  6. ^ Holleman, Arnold Frederik; Wiberg, Egon (2001), Wiberg, Nils (ed.), Inorganic Chemistry, translated by Eagleson, Mary; Brewer, William, San Diego/Berlin: Academic Press/De Gruyter, ISBN 0-12-352651-5
  7. ^ Schutte, W.J.; De Boer, J.L.; Jellinek, F. (1986). "Crystal Structures of Tungsten Disulfide and Diselenide". Journal of Solid State Chemistry. 70 (2): 207–209. Bibcode:1987JSSCh..70..207S. doi:10.1016/0022-4596(87)90057-0.

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