RCA clean

The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing.

Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.[1][2][3] It involves the following chemical processes performed in sequence:

  1. Removal of the organic contaminants (organic clean + particle clean)
  2. Removal of thin oxide layer (oxide strip, optional)
  3. Removal of ionic contamination (ionic clean)
  1. ^ RCA Clean. Materials at Colorado School of Mines Archived 2000-03-05 at the Wayback Machine
  2. ^ Kern, W. (1990). "The Evolution of Silicon Wafer Cleaning Technology". Journal of the Electrochemical Society. 137 (6): 1887–1892. Bibcode:1990JElS..137.1887K. doi:10.1149/1.2086825.
  3. ^ W. Kern and D. A. Puotinen: RCA Rev. 31 (1970) 187.

RCA clean

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